%0 Journal Article
%T Photoluminescence Peaks from α-SiOxNy Thin Films<br>α-SiO_xN_y薄膜中分立能级的光发射
%A SHI Wang
%A |zhou
%A LIANG Hou
%A |yun
%A <br>石旺舟
%A 梁厚蕴
%J 半导体学报
%D 2000
%I 
%X Amorphous SiO\- x N\- y thin films were deposited by PECVD technique. Strong photoluminescence peaks centering at 330,340,345,735 and 745nm from prepared samples were observed at room temperature. The relation between PL peaks and the content of N and O has been investigated. The results show that the position of PL peaks does not move, and the occurrence of the peaks depends on the coexistence of N and O in the films. The intensity of the peak increases to the maximum when the atomic content of N and O is about 30%. It indicates that PL peaks might originate from the luminescence centers due to the O\|Si\|N defect.
%K SiO_xN_y
%K photoluminescence<br>α-SiO_xN_y
%K 光发射
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=52180E3C0073DB64&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=708DD6B15D2464E8&sid=17FE7A1C78626A81&eid=2D52C01434B71375&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10