Electroluminescence of Si,Ge and Ar IOn-Implanted Si-Rich SiO2
硅、锗和氩离子注入富硅二氧化硅的电致发光

Si\|rich SiO\-2 films are fabricated using the RF magnetron sputtering technique and a comparative study of EL from Au/Si\|rich SiO\-2/p\|Si and that from Au/ion implanted Si\|rich SiO\-2/p\|Si is made.Compared to the Au/Si\|rich SiO\-2/p\|Si whose EL spectrum has a peak at 1.8eV and a shoulder at 2.4eV,both Au/Ge implanted Si\|rich SiO\-2/p\|Si and Au/Ar implanted Si\|rich SiO\-2/p\|Si have a new band at 2 2eV,while Au/Si implanted Si\|rich SiO\-2/p\|Si only enhances the 1 8eV and 2 4eV peaks in different degrees. Some SiO\-2 films are also fabricated with the thermal grown technique and an investigation is carried out.But no EL can be found from the Au/thermal grown SiO\-2/p\|Si, no matter whether the thermal grown SiO\-2 films are implanted or not.The results are explained by the Tunneling\|Quantum Confinement\|Luminescence Centers (TQCLC) model.