%0 Journal Article
%T Electroluminescence of Si,Ge and Ar IOn-Implanted Si-Rich SiO2<br>硅、锗和氩离子注入富硅二氧化硅的电致发光
%A WANG Yan
%A |bing
%A SUN Yong
%A |ke
%A QIAO Yong
%A |ping
%A ZHANG Bo
%A |rui
%A QIN Guo
%A |gang
%A <br>王艳兵
%A 孙永科
%A 乔永平
%A 张伯蕊
%A 秦国刚
%A 陈文台
%A 龚义元
%A 吴德馨
%A 马振昌
%A 宗婉华
%J 半导体学报
%D 2000
%I 
%X Si\|rich SiO\-2 films are fabricated using the RF magnetron sputtering technique and a comparative study of EL from Au/Si\|rich SiO\-2/p\|Si and that from Au/ion implanted Si\|rich SiO\-2/p\|Si is made.Compared to the Au/Si\|rich SiO\-2/p\|Si whose EL spectrum has a peak at 1.8eV and a shoulder at 2.4eV,both Au/Ge implanted Si\|rich SiO\-2/p\|Si and Au/Ar implanted Si\|rich SiO\-2/p\|Si have a new band at 2 2eV,while Au/Si implanted Si\|rich SiO\-2/p\|Si only enhances the 1 8eV and 2 4eV peaks in different degrees. Some SiO\-2 films are also fabricated with the thermal grown technique and an investigation is carried out.But no EL can be found from the Au/thermal grown SiO\-2/p\|Si, no matter whether the thermal grown SiO\-2 films are implanted or not.The results are explained by the Tunneling\|Quantum Confinement\|Luminescence Centers (TQCLC) model.
%K silicon base luminescence
%K EL
%K luminescence centers
%K nanometer silicon (germanium)
%K quantum confinement
%K ion implantation<br>硅基发光
%K 电致发光
%K 发光中心
%K 纳米硅(锗)
%K 量子限制
%K 离子注入
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=58C8AA740A7FF663&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=DF92D298D3FF1E6E&sid=06DAE5E1DF7D0B6A&eid=B7DE0F3CA34DA149&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=21