Effect of Annealing Damages on Luminescences of Er,Yb-Implanted GaAs and InP
退火损伤对Er注入GaAs和Yb注入InP发光的影响

The photoluminescences of Er~+ or Yb~+-implanted GaAs and InP after annealing is repo-rted. The surface distribution of Er ions in GaAs: Er annealed samples is analysed by secon-dary ion mass spectroscopy (SIMS), and the rocking curves of the related luminescent samplesare measured by X-ray double crystal diffraction for GaAs: Er, InP:Er and InP:Yb. The ef-fects of the annealing damages on the luminescences of GaAs: Er and InP:Yb are investigated,and the luminescent center model of Er~(3+) complex is discussed.