%0 Journal Article
%T Effect of Annealing Damages on Luminescences of Er,Yb-Implanted GaAs and InP<br>退火损伤对Er注入GaAs和Yb注入InP发光的影响
%A Cao Wanghe/Changchun Institute of Physics
%A Academia SinicaChang Liansu/Changchun Institute of Physics
%A Academia Sinica
%A <br>曹望和
%A 张联苏
%J 半导体学报
%D 1991
%I 
%X The photoluminescences of Er~+ or Yb~+-implanted GaAs and InP after annealing is repo-rted. The surface distribution of Er ions in GaAs: Er annealed samples is analysed by secon-dary ion mass spectroscopy (SIMS), and the rocking curves of the related luminescent samplesare measured by X-ray double crystal diffraction for GaAs: Er, InP:Er and InP:Yb. The ef-fects of the annealing damages on the luminescences of GaAs: Er and InP:Yb are investigated,and the luminescent center model of Er~(3+) complex is discussed.
%K Rare earth ion
%K GaAs
%K InP
%K Photoluminescence
%K Luminescent center<br>稀土离子
%K 注入
%K GaAs
%K InP
%K 光致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B0E27E699C16BC68&yid=116CB34717B0B183&vid=59906B3B2830C2C5&iid=0B39A22176CE99FB&sid=E203FB1A272C9DD2&eid=7AA74D31F1FF2DCE&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=4