Rutherford Backscattering and Channeling,Double Crystal X-ray Diffraction and Photoluminescence of GaN
GaN的RBS/沟道、X射线双晶衍射和光致发光谱

Rutherford Backscattering and Channeling\,double crystal X\|ray diffraction\,photoluminescence technique are used to study the quality of undoped GaN layers grown by organometallic vapor phase epitaxy on Al\-2O\-3 substrates.The results show that they have good agreements with each other in characterizing the quality of GaN films.