%0 Journal Article
%T Rutherford Backscattering and Channeling,Double Crystal X-ray Diffraction and Photoluminescence of GaN<br>GaN的RBS/沟道、X射线双晶衍射和光致发光谱
%A YAO Dong
%A |min
%A XIN Yong
%A WANG Li
%A LI Shu
%A |ti
%A XIONG Chuan
%A |bing
%A PENG Xue
%A |xin
%A LIU Nian
%A |hua
%A JIANG Feng
%A |yi
%A <br>姚冬敏
%A 辛勇
%A 王立
%A 李述体
%A 熊传兵
%A 彭学新
%A 刘念华
%A 江风益
%J 半导体学报
%D 2000
%I 
%X Rutherford Backscattering and Channeling\,double crystal X\|ray diffraction\,photoluminescence technique are used to study the quality of undoped GaN layers grown by organometallic vapor phase epitaxy on Al\-2O\-3 substrates.The results show that they have good agreements with each other in characterizing the quality of GaN films.
%K GaN
%K RBS/channeling
%K XRD
%K PL<br>GaN
%K RBS/沟道
%K X射线双晶衍射
%K 光致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=430BFA643D183DAF&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=94C357A881DFC066&sid=B40AD8FE6FA88DE9&eid=78976D931AD1540F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=11