Fabrication Process and Leakage Current Conduction Mechanisms of Al2O3 Gate Dielectric Thin Films
Al_2O_3栅介质的制备工艺及其泄漏电流输运机制

Al 2O 3 gate dielectric thin films are deposited on P-Si(100) substrate by the method of reacting magnetron sputtering and furnace annealing.The impacts of different sputtering atmospheres and annealing conditions are studied.The results show that annealing in N 2 ambience at higher temperature can reduce the leakage current significantly,and annealing in O 2 ambience can effectively decrease the oxygen vacancy in Al 2O 3 films.The study of the leakage current conduction mechanisms of Al 2O 3 gate dielectric films shows that the leakage is induced mainly by Schottky emission mechanism for substrate electron injection,while both Schottky emission and Frenkel-Poole emission mechanism may contribute to the leakage current for gate electron injection.