%0 Journal Article
%T Fabrication Process and Leakage Current Conduction Mechanisms of Al2O3 Gate Dielectric Thin Films<br>Al_2O_3栅介质的制备工艺及其泄漏电流输运机制
%A Ren Chi
%A Yang Hong
%A Han Dedong
%A Kang Jinfeng
%A Liu Xiaoyan
%A Han Ruqi
%A <br>任驰
%A 杨红
%A 韩德栋
%A 康晋锋
%A 刘晓彦
%A 韩汝琦
%J 半导体学报
%D 2003
%I 
%X Al 2O 3 gate dielectric thin films are deposited on P-Si(100) substrate by the method of reacting magnetron sputtering and furnace annealing.The impacts of different sputtering atmospheres and annealing conditions are studied.The results show that annealing in N 2 ambience at higher temperature can reduce the leakage current significantly,and annealing in O 2 ambience can effectively decrease the oxygen vacancy in Al 2O 3 films.The study of the leakage current conduction mechanisms of Al 2O 3 gate dielectric films shows that the leakage is induced mainly by Schottky emission mechanism for substrate electron injection,while both Schottky emission and Frenkel-Poole emission mechanism may contribute to the leakage current for gate electron injection.
%K Al
%K 2O
%K 3 gate dielectric
%K leakage current conduction mechanisms
%K Schottky emission
%K Frenkel-Poole emission<br>Al2O3栅介质
%K 泄漏电流输运机制
%K Schottky发射
%K Frenkel-Poole发射
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=037571AE3EFC395C&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=F3090AE9B60B7ED1&sid=8DABBEB130EFF191&eid=5348E91DA94080DE&journal_id=1674-4926&journal_name=半导体学报&referenced_num=4&reference_num=7