Influence of a Parallel Magnetic Field on Localization of Disordered Two-Dimensional Electrons in GaAs/Al_xGa_(1-x)As Heterostructures
平行磁场对GaAs/Al_xGa_(1-x)As异质结中无序二维电子的局域化效应的影响

A new physical model has been developed to explain previously observed negative parallelmagnetoresistances (NPMR) in terms of suppression of the localization in disordered two dimensionalelectron systems by lateral shift of subband parabolas in a magnetice field parallelto the two dimensional (2D) plane.Excellent agreement has been achieved between the resultsobtained with our model and B. Lin's data, leading to obtain proper values for both averageconfining length and dephasing time