%0 Journal Article
%T Influence of a Parallel Magnetic Field on Localization of Disordered Two-Dimensional Electrons in GaAs/Al_xGa_(1-x)As Heterostructures<br>平行磁场对GaAs/Al_xGa_(1-x)As异质结中无序二维电子的局域化效应的影响
%A Zhou Haiping/Institute of Semiconductors
%A Academia Sinca
%A BeijingZheng Houzhi/China Center ot Advanced Science
%A Technology
%A <br>周海平
%A 郑厚植
%J 半导体学报
%D 1990
%I 
%X A new physical model has been developed to explain previously observed negative parallelmagnetoresistances (NPMR) in terms of suppression of the localization in disordered two dimensionalelectron systems by lateral shift of subband parabolas in a magnetice field parallelto the two dimensional (2D) plane.Excellent agreement has been achieved between the resultsobtained with our model and B. Lin's data, leading to obtain proper values for both averageconfining length and dephasing time
%K Quantum transport properties
%K Two-dimensional electron gas
%K GaAs/n-AlGa-<br>二维电子
%K 量子输运特性
%K GaAs/n型AlGaAs
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A52C910395F151E45CFA538F819CE909&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=B31275AF3241DB2D&sid=FED44C0135DC1D9C&eid=BFB86B6ED3A99B9D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0