A Physical Model for Silicon Anisotropic Etching in KOH
硅在KOH中各向异性腐蚀的物理模型

A novel physical model for describing the process of silicon anisotropic wet chem ical etching is proposed.Based on the actual process of etching chemical reaction,non- linear equations are presented and a series of m icroscopic- param eters are creatively put forward,including the influence of etching tem perature and etchant concentration.Com paring the calculated re- sults against the experim ental data,the model and its parameters are shown to be suitable.