%0 Journal Article
%T A Physical Model for Silicon Anisotropic Etching in KOH<br>硅在KOH中各向异性腐蚀的物理模型
%A Jiang Yanfeng
%A Huang Qing' an
%A Wu Wengang
%A Hao Yilong
%A Yang Zhenchuan
%A <br>姜岩峰
%A 黄庆安
%A 吴文刚
%A 郝一龙
%A 杨振川
%J 半导体学报
%D 2002
%I 
%X A novel physical model for describing the process of silicon anisotropic wet chem ical etching is proposed.Based on the actual process of etching chemical reaction,non- linear equations are presented and a series of m icroscopic- param eters are creatively put forward,including the influence of etching tem perature and etchant concentration.Com paring the calculated re- sults against the experim ental data,the model and its parameters are shown to be suitable.
%K anisotropic etching
%K activation energy
%K etching rat<br>各向异性腐蚀
%K 激活能
%K 腐蚀速率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=7D1537AD7A24E0D2&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=E158A972A605785F&sid=E57FE519484CFB70&eid=AC2617B68B137D9D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=8&reference_num=18