Photoemission Study on Interfacial Reaction and Thermal Annealing Behavior of Al/a-Si:H System
Al/a-Si:H界面反应和热处理行为光发射研究

The Al/a-Si:H interface has been investigated by XPS and AES. The experimental resu-lts show that the Al Cluster which includes reacted Al and non-reacted Al occurs as initialformation of Al/a-Si:H interface, and after exceeding a critical Al deposition, intermixingregion of reacted Al and Si is formed at the interface, while non-reacted Al forms metal Allayer on the sample surface. Moreover, the interfacial reaction and element interdiffusion ofAl/a-Si:H are enhanced by thermal annealing.