%0 Journal Article
%T Photoemission Study on Interfacial Reaction and Thermal Annealing Behavior of Al/a-Si:H System<br>Al/a-Si:H界面反应和热处理行为光发射研究
%A 钟战天
%A 王大文
%A 廖显伯
%A 牟善明
%A 范越
%A 李承芳
%J 半导体学报
%D 1991
%I 
%X The Al/a-Si:H interface has been investigated by XPS and AES. The experimental resu-lts show that the Al Cluster which includes reacted Al and non-reacted Al occurs as initialformation of Al/a-Si:H interface, and after exceeding a critical Al deposition, intermixingregion of reacted Al and Si is formed at the interface, while non-reacted Al forms metal Allayer on the sample surface. Moreover, the interfacial reaction and element interdiffusion ofAl/a-Si:H are enhanced by thermal annealing.
%K Al/a-Si:H interface
%K Photoemission
%K Thermal annealing
%K Interfacial reaction and formation<br>金属非晶硅
%K 界面
%K 热处理
%K 光发
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9687A7AB570B1212F3E84DC98BF4FDAD&yid=116CB34717B0B183&vid=59906B3B2830C2C5&iid=0B39A22176CE99FB&sid=68D88C2FCF9C3098&eid=AA76E167F386B6B3&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=3