Analysis of Static Capacitance Contrast for the IC Chip Irradiated by Low-Energy Electron Beam
低能电子束照射集成电路芯片时的静态电容衬度分析

Positive charging of an insulator film is a prospect of being utilized for the testing of IC chip with a low- energy elec- tron beam (e- beam ) .At first,return characteristics of secondary electrons (SE) em itted from insulator surface positively charged by e- beam irradiation is studied.The surface potential and SE signal current during the charge accumulation process are then derived as a function of irradiation charge density through effective capacitances between the irradiating pointand the substrate.Theory of static capacitance contrast (SCC) is presented for the passivated IC chip under e- beam irradiation.Influ- ence of the irradiation condition and the inner topographic and material param eters of the IC chip on SCC is also analyzed theo- retically.The results can explain the maxim um SCC phenomenon and optimum electron irradiation condition found in recent SEM experiments.