%0 Journal Article
%T Analysis of Static Capacitance Contrast for the IC Chip Irradiated by Low-Energy Electron Beam<br>低能电子束照射集成电路芯片时的静态电容衬度分析
%A Feng Renjian
%A Zhang Haiboand Katsumi URA
%A <br>冯仁剑
%A 张海波
%A Katsumi URA
%J 半导体学报
%D 2002
%I 
%X Positive charging of an insulator film is a prospect of being utilized for the testing of IC chip with a low- energy elec- tron beam (e- beam ) .At first,return characteristics of secondary electrons (SE) em itted from insulator surface positively charged by e- beam irradiation is studied.The surface potential and SE signal current during the charge accumulation process are then derived as a function of irradiation charge density through effective capacitances between the irradiating pointand the substrate.Theory of static capacitance contrast (SCC) is presented for the passivated IC chip under e- beam irradiation.Influ- ence of the irradiation condition and the inner topographic and material param eters of the IC chip on SCC is also analyzed theo- retically.The results can explain the maxim um SCC phenomenon and optimum electron irradiation condition found in recent SEM experiments.
%K electron irradiation
%K insulator charging
%K secondary electron
%K capacitance im age contrast
%K SEM
%K IC testing<br>电子照射
%K 绝缘物带电
%K 二次电子
%K 电容衬度
%K 扫描电镜
%K 集成电路检测
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9762F51A69B98161&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=E158A972A605785F&sid=B7ACE2F11789CAE0&eid=DDEED1BDDBFAA8A7&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11