Negative Differential Resistance Heterojunction Bipolar Transistor with Resistive Gate Structure
电阻栅结构负阻异质结双极晶体管

The n-InGaP/p-GaAs/n-GaAs negative differential resistance heterojunction bipolar transistor with resistive gate structure (RGNDRHBT) is designed and fabricated successfully.The I-V characteristics of the fabricated device are better than those in Ref.3].Both modes on negative differential resistance characteristics for constant voltage and constant current are found,and the physical mechanism of both modes on negative differential resistance characteristics are explained.Finally,the application prospect of this device is expected.