%0 Journal Article
%T Negative Differential Resistance Heterojunction Bipolar Transistor with Resistive Gate Structure<br>电阻栅结构负阻异质结双极晶体管
%A Guo Weilian
%A Qi Haitao
%A Zhang Shilin
%A Zhong Ming
%A LIANG Huilai
%A Mao Luhong
%A Song Ruiliang
%A Hu Haiyang
%A <br>郭维廉
%A 齐海涛
%A 张世林
%A 钟鸣
%A 梁惠来
%A 毛陆虹
%A 宋瑞良
%A 胡海洋
%J 半导体学报
%D 2005
%I 
%X The n-InGaP/p-GaAs/n-GaAs negative differential resistance heterojunction bipolar transistor with resistive gate structure (RGNDRHBT) is designed and fabricated successfully.The I-V characteristics of the fabricated device are better than those in Ref.3].Both modes on negative differential resistance characteristics for constant voltage and constant current are found,and the physical mechanism of both modes on negative differential resistance characteristics are explained.Finally,the application prospect of this device is expected.
%K heterojunction bipolar transistor
%K negative differential resistance device
%K resistive gate<br>异质结双极晶体管
%K 负阻器件
%K 电阻栅
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=BE2BE0F6A877357B&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=B31275AF3241DB2D&sid=E2F55FDAFC844F27&eid=7C786AA9670CF26C&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=5