Simulation of Oxygen Distribution in the Oxygen Implanted SOI Structure
注入氧形成的SOI结构中氧分布的模拟

An emperieal formula to simulate the oxygen implanted distribution for SIMOX techniquehave been proposed.Using this formula,the simulation results are in good agreement with so-me experimental and former theoretical results. Our formula is both simple and accurate,which is suitable for using as a part of the VLSI complete process simulator.