%0 Journal Article
%T Simulation of Oxygen Distribution in the Oxygen Implanted SOI Structure<br>注入氧形成的SOI结构中氧分布的模拟
%A Ruan Gang/Microelectronics Institute
%A Fudan University
%A ShanghaiXu Chenxi/Microelectronics Institute
%A Fudan University
%A ShanghaiYu Qiang/Microelectronics Institute
%A Fudan University
%A Shanghai
%A <br>阮刚
%A 徐晨曦
%A 俞强
%J 半导体学报
%D 1989
%I 
%X An emperieal formula to simulate the oxygen implanted distribution for SIMOX techniquehave been proposed.Using this formula,the simulation results are in good agreement with so-me experimental and former theoretical results. Our formula is both simple and accurate,which is suitable for using as a part of the VLSI complete process simulator.
%K SIMOX technique
%K Oxygen implantation
%K Implanted profile profile
%K process simulation<br>SIMOX
%K 氧注入
%K 注入分布
%K 工艺模拟
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8A11EFEE1A23C663&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=DF92D298D3FF1E6E&sid=C4BBAD7A2DCC89BC&eid=AE43DE0664B02889&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=0