Determination of Trace Tellurium in GaAs and InSb by Flameless Atomic Absorption Spectrometry
砷化镓、锑化铟中痕量碲的无火焰原子吸收分光光度法测定

Various chemical etchants have been systematically studied in order to find a sutiable ratefor etching GaAs and InSb.The interference of matrixes GaAs and InSb can be eliminatedby increasing the ash temperture and adding a collected factor respectively.The establishedmethod is accurate and fast, and satisfies the requirement of semiconductors material techno-logy.