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半导体学报 1988
Determination of Trace Tellurium in GaAs and InSb by Flameless Atomic Absorption Spectrometry
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Abstract:
Various chemical etchants have been systematically studied in order to find a sutiable ratefor etching GaAs and InSb.The interference of matrixes GaAs and InSb can be eliminatedby increasing the ash temperture and adding a collected factor respectively.The establishedmethod is accurate and fast, and satisfies the requirement of semiconductors material techno-logy.