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OALib Journal期刊
ISSN: 2333-9721
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Determination of Trace Tellurium in GaAs and InSb by Flameless Atomic Absorption Spectrometry
砷化镓、锑化铟中痕量碲的无火焰原子吸收分光光度法测定

Keywords: Determination of trace tellurium,Flameless Atomic Absorption Spectrometry
痕量碲的测定
,无火焰原子吸收光谱法

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Abstract:

Various chemical etchants have been systematically studied in order to find a sutiable ratefor etching GaAs and InSb.The interference of matrixes GaAs and InSb can be eliminatedby increasing the ash temperture and adding a collected factor respectively.The establishedmethod is accurate and fast, and satisfies the requirement of semiconductors material techno-logy.

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