%0 Journal Article
%T Determination of Trace Tellurium in GaAs and InSb by Flameless Atomic Absorption Spectrometry<br>砷化镓、锑化铟中痕量碲的无火焰原子吸收分光光度法测定
%A Cui Xianhang/Institute of Semiconductors
%A Academia SinicaXu Xuemin/Institute of Semiconductors
%A Academia Sinica
%A <br>崔仙航
%A 徐学敏
%J 半导体学报
%D 1988
%I 
%X Various chemical etchants have been systematically studied in order to find a sutiable ratefor etching GaAs and InSb.The interference of matrixes GaAs and InSb can be eliminatedby increasing the ash temperture and adding a collected factor respectively.The establishedmethod is accurate and fast, and satisfies the requirement of semiconductors material techno-logy.
%K Determination of trace tellurium
%K Flameless Atomic Absorption Spectrometry<br>痕量碲的测定
%K 无火焰原子吸收光谱法
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=1C83D1A67912E928&yid=0702FE8EC3581E51&vid=9CF7A0430CBB2DFD&iid=38B194292C032A66&sid=E2B9962CCD971A0D&eid=EBD6B792C9111B87&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0