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半导体学报 1988
Computer Simulation of Thin Film Growth and Interface Structure
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Abstract:
Some of the processes involved in thin film nucleation and growth are discussed.Somephenomena presented in homogeneous and heteroepitaxy growth are also investigated. Bymeans of computer simulation,the interface potential,the interface distort and the interfacedefect are specially emphasized.The surface morphology of vapor-deposited and LPE films isdemoastrated by computer simulation.The comparision and identify of this work with theexperimental results are also given.