%0 Journal Article
%T Computer Simulation of Thin Film Growth and Interface Structure<br>薄膜生长及界面结构的计算机模拟
%A Tian Minbo/
%A <br>田民波
%A 王英华
%A 梁春富
%J 半导体学报
%D 1988
%I 
%X Some of the processes involved in thin film nucleation and growth are discussed.Somephenomena presented in homogeneous and heteroepitaxy growth are also investigated. Bymeans of computer simulation,the interface potential,the interface distort and the interfacedefect are specially emphasized.The surface morphology of vapor-deposited and LPE films isdemoastrated by computer simulation.The comparision and identify of this work with theexperimental results are also given.
%K Thin film
%K Computer simulation
%K Surface and interface
%K Misfit dislocation
%K Epitaxial growth
%K Adsorption
%K Desorption and surface migration
%K Diffusion<br>薄膜
%K 计算机模拟
%K 表面和界面
%K 失配位错
%K 外延生长
%K 吸附、解吸和表面迁移
%K 扩散
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=74333D221C3F27B4&yid=0702FE8EC3581E51&vid=9CF7A0430CBB2DFD&iid=B31275AF3241DB2D&sid=CD26609C367AC9C8&eid=240CB58995465C01&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0