Rapid Thermal Annealing of Al-Si Contacts
Al-Si接触的快速热退火

A simple and direct method,Al-Si ohmic contact achieved by utilizing rapid thermalannealing for 30 sec of conventional furnace instead of conventional sintering,is reported.AES, SEM, specific contact resistance and PN junction reverse currem investigations showthat Al-Si interdiffusion phenomenon which causes the failure for shallow junction device canbe restricted effectively,therefore ohmic contact with good junction property can be achieved.