%0 Journal Article
%T Rapid Thermal Annealing of Al-Si Contacts<br>Al-Si接触的快速热退火
%A Chen Cunli/
%A <br>陈存礼
%A 彭辉
%A 李联珠
%J 半导体学报
%D 1988
%I 
%X A simple and direct method,Al-Si ohmic contact achieved by utilizing rapid thermalannealing for 30 sec of conventional furnace instead of conventional sintering,is reported.AES, SEM, specific contact resistance and PN junction reverse currem investigations showthat Al-Si interdiffusion phenomenon which causes the failure for shallow junction device canbe restricted effectively,therefore ohmic contact with good junction property can be achieved.
%K Ohmic contact
%K Rapid thermal Annealing
%K Specific contact resistance<br>欧姆接触
%K 快速热退火
%K 接触电阻率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=DECC1A50BA5CD418&yid=0702FE8EC3581E51&vid=9CF7A0430CBB2DFD&iid=38B194292C032A66&sid=3C6F5C97A07587AE&eid=CA9ED1AB4D9E3E04&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0