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OALib Journal期刊
ISSN: 2333-9721
费用：99美元
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Deep Level Investigation of N-Doped FZ Si Crystals
掺氮区熔硅单晶深能级的研究
Luan Hongfa/Institute of Semiconductors, Academia Sinica, BeijingLiang Junwu/Institute of Semiconductors, Academia Sinica, BeijingDeng Lisheng/Institute of Semiconductors, Academia Sinica, BeijingZheng Hongjun/Institute of Semiconductors, Academia Sinica, BeijingHuang Dading/Institute of Semiconductors, Academia Sinica, Beijing,
栾洪发, 梁骏吾, 邓礼生, 郑红军, 黄大定
Keywords: Silicon,Deep levels,Nitrogen impurity
深能级,硅材料,氮杂质
Abstract:
DLTS测量发现,在原生掺氮区熔硅单晶中,除E_c-0.20eV、E_c-0.28eV与氮相关外,E_c-0.57eV能级也与氮相关.此三能级在低于400℃、经0.5 小时退火均消失,同时测得三个与氮相关的新能级E_c-0.17eV、E_c-0.37eV和E_c-0.50eV,并研究了它们的退火行为. Full-Text
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