%0 Journal Article
%T Deep Level Investigation of N-Doped FZ Si Crystals<br>掺氮区熔硅单晶深能级的研究
%A Luan Hongfa/Institute of Semiconductors
%A Academia Sinica
%A BeijingLiang Junwu/Institute of Semiconductors
%A Academia Sinica
%A BeijingDeng Lisheng/Institute of Semiconductors
%A Academia Sinica
%A BeijingZheng Hongjun/Institute of Semiconductors
%A Academia Sinica
%A BeijingHuang Dading/Institute of Semiconductors
%A Academia Sinica
%A Beijing
%A <br>栾洪发
%A 梁骏吾
%A 邓礼生
%A 郑红军
%A 黄大定
%J 半导体学报
%D 1988
%I 
%X DLTS测量发现,在原生掺氮区熔硅单晶中,除E_c-0.20eV、E_c-0.28eV与氮相关外,E_c-0.57eV能级也与氮相关.此三能级在低于400℃、经0.5 小时退火均消失,同时测得三个与氮相关的新能级E_c-0.17eV、E_c-0.37eV和E_c-0.50eV,并研究了它们的退火行为.
%K Silicon
%K Deep levels
%K Nitrogen impurity<br>深能级
%K 硅材料
%K 氮杂质
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=BE939E0018398458&yid=0702FE8EC3581E51&vid=9CF7A0430CBB2DFD&iid=38B194292C032A66&sid=7737D2F848706113&eid=AA5FB09E1F81059E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0