Electronic Structure and Formation of MoSi_2 Silicide
MoSi_2硅化物的形成及电子结构的研究

The properties of electronic structure and formations of MoSi_2 silicide prepared by co-sputtering Mo and Si atoms on silicon substrates under the condition of the steady thermal an-nealing are investigated with the techniques including XPS,UPS,AES,X-ray diffraction andRamman scattering spectroscopy.