%0 Journal Article
%T Electronic Structure and Formation of MoSi_2 Silicide<br>MoSi_2硅化物的形成及电子结构的研究
%A Li Baoqi University of Science
%A Technology of China
%A HefeiJi Mingrong University of Science
%A Technology of China
%A HefeiWu Jianxin University of Science
%A Technology of China
%A HefeiHsu Chenchia Institute of Semiconductors
%A Academia Sinica
%A BeijingYian Jiang Institute of Semiconductors
%A Academia Sinica
%A Beijing
%A <br>李宝骐
%A 季明荣
%A 吴建新
%A 许振嘉
%A 阎江
%J 半导体学报
%D 1989
%I 
%X The properties of electronic structure and formations of MoSi_2 silicide prepared by co-sputtering Mo and Si atoms on silicon substrates under the condition of the steady thermal an-nealing are investigated with the techniques including XPS,UPS,AES,X-ray diffraction andRamman scattering spectroscopy.
%K Interfaces
%K Metal-Semiconductors
%K Photoemission Spectroscopies<br>金属
%K 半导体界面
%K 光电子谱
%K 硅化物
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=71FE90CD1688F307E2A75CAA2F50A31B&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=38B194292C032A66&sid=E114CF9BB47B65BE&eid=D46BA3D3D4B3C585&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=3