Investigation on Terahertz Generation with GaAs Photoconductor Triggered by Femo-Second Laser Pulse
用飞秒激光触发GaAs光电导体产生THz电磁波的研究

Experiments of terahertz generation with semi-insulating GaAs photoconductive dipole antenna triggered by femto-second laser pulses are reported.The switch is insulated by Si 3N 4 film and the gap of two electrodes is 3mm.When it is triggered by Ti-sapphire femo-second laser pulses with 130mW of average power,14fs of pulse duration,82 of MHz repetition rate and operated at 540V of biased electric voltage,both terahertz waveform and about 1ps width of the THz electric pulse is observed from the test of electro-optic sampling.The frequency spectrum of the terahertz radiation ranges about 2THz,and its amplitude peaks are at roughly 0.5THz.