%0 Journal Article
%T Investigation on Terahertz Generation with GaAs Photoconductor Triggered by Femo-Second Laser Pulse<br>用飞秒激光触发GaAs光电导体产生THz电磁波的研究
%A Shi Wei
%A Zhang Xianbin
%A Jia Wanli
%A Li Mengxia
%A Xu Jingzhou
%A Zhang Xicheng
%A <br>施卫
%A 张显斌
%A 贾婉丽
%A 李孟霞
%A 许景周
%A 张希成
%J 半导体学报
%D 2004
%I 
%X Experiments of terahertz generation with semi-insulating GaAs photoconductive dipole antenna triggered by femto-second laser pulses are reported.The switch is insulated by Si 3N 4 film and the gap of two electrodes is 3mm.When it is triggered by Ti-sapphire femo-second laser pulses with 130mW of average power,14fs of pulse duration,82 of MHz repetition rate and operated at 540V of biased electric voltage,both terahertz waveform and about 1ps width of the THz electric pulse is observed from the test of electro-optic sampling.The frequency spectrum of the terahertz radiation ranges about 2THz,and its amplitude peaks are at roughly 0.5THz.
%K GaAs photoconductive dipole antenna
%K terahertz radiation
%K picosecond electric pulse<br>GaAs光电导偶极天线
%K 太赫兹电磁波
%K 皮秒电脉冲
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=0E361F48FC752985&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=59906B3B2830C2C5&sid=E0E0A0F322B76027&eid=0F13B34BCC0D8726&journal_id=1674-4926&journal_name=半导体学报&referenced_num=15&reference_num=14