Ni Induced Crystallization of Amorphous SiGe
Ni诱导非晶SiGe薄膜结晶

Polycrystalline SiGe layers are obtained by Ni induced crystallization of the amorphous ones.The films are characterized by XRD and Auger electron depth profile.The influences of the process parameters (such as annealing duration,thickness of Ni layer) and the existence of O in the annealing ambient on Ni induced crystallization of a-SiGe are discussed.The experimental results show that the Ni inducing crystallization can significantly reduce the temperature of crystallization and time of amorphous SiGe.The existence of O in the annealing ambient thwarts the crystallization of the films.By annealing the samples using RTA first,then by normal furnace annealing,the crystallinity of the samples is improved.