%0 Journal Article
%T Ni Induced Crystallization of Amorphous SiGe<br>Ni诱导非晶SiGe薄膜结晶
%A Duan Peng
%A Qu Xinping
%A Liu Ping
%A Xu Zhanhong
%A Ru Guoping
%A Li Bingzong
%A <br>段鹏
%A 屈新萍
%A 刘萍
%A 徐展宏
%A 茹国平
%A 李炳宗
%J 半导体学报
%D 2004
%I 
%X Polycrystalline SiGe layers are obtained by Ni induced crystallization of the amorphous ones.The films are characterized by XRD and Auger electron depth profile.The influences of the process parameters (such as annealing duration,thickness of Ni layer) and the existence of O in the annealing ambient on Ni induced crystallization of a-SiGe are discussed.The experimental results show that the Ni inducing crystallization can significantly reduce the temperature of crystallization and time of amorphous SiGe.The existence of O in the annealing ambient thwarts the crystallization of the films.By annealing the samples using RTA first,then by normal furnace annealing,the crystallinity of the samples is improved.
%K metal induced crystallization
%K amorphous SiGe thin flim
%K solid phase crystallization<br>金属诱导结晶
%K 非晶SiGe薄膜
%K 固相结晶
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=85736519030C27E0&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=708DD6B15D2464E8&sid=C13C5D291D09385A&eid=8D2AA7F1A00E26D5&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=12