A Novel Surface Passivation Process of CdZnTe Material
CdZnTe材料的表面钝化新工艺

A novel passivation process is presented,in which first the CZT sample is etched by KOH-KCl agent and then passivated by NH_4F/H_2O_2 agent.The AES results show that the novel passivation process forms an oxide layer on the CZT surface and leaves a nearly stoichiometric interface layer between the oxide layer and CZT substrate.I-V characteristics show that the surface leakage current of the CZT detectors passivated by the novel process is reduced obviously in comparison with those either by KOH-KCl or NH_4F/H_2O_2 process.These results indicate that this passivation process has promising applications in the fabrication of CZT detectors.