%0 Journal Article
%T A Novel Surface Passivation Process of CdZnTe Material<br>CdZnTe材料的表面钝化新工艺
%A Wang Kunshu
%A Sang Wenbin
%A Min Jiahua
%A Teng Jianyong
%A Zhang Qi
%A Xia Jun
%A Qian Yongbiao
%A <br>王昆黍
%A 桑文斌
%A 闵嘉华
%A 腾建勇
%A 张奇
%A 夏军
%A 钱永彪
%J 半导体学报
%D 2005
%I 
%X A novel passivation process is presented,in which first the CZT sample is etched by KOH-KCl agent and then passivated by NH_4F/H_2O_2 agent.The AES results show that the novel passivation process forms an oxide layer on the CZT surface and leaves a nearly stoichiometric interface layer between the oxide layer and CZT substrate.I-V characteristics show that the surface leakage current of the CZT detectors passivated by the novel process is reduced obviously in comparison with those either by KOH-KCl or NH_4F/H_2O_2 process.These results indicate that this passivation process has promising applications in the fabrication of CZT detectors.
%K CdZnTe crystal
%K surface passivation
%K leakage current<br>CdZnTe晶体
%K 表面钝化
%K 漏电流
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=0766353E9A14349A&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=DF92D298D3FF1E6E&sid=8090F7AAC926756F&eid=01AFAE7A0B7C782E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13