Patterned SIMOX Technique for Deep Sub-Micron DSOI Devices
应用于深亚微米DSOI器件的埋氧层的制备

Buried oxide at deep sub-micron intervals is successfully fabricated by patterned SIMOX techniques with low dosage and low energy.The distance between the buried oxide layers can be controlled to 180nm when the length of the silicon dioxide mask is 172nm.Good shape and sharp interface are observed by TEM with no silicon islands and other defects.This technique strongly supports the development of deep sub-micron DSOI devices.