%0 Journal Article
%T Patterned SIMOX Technique for Deep Sub-Micron DSOI Devices<br>应用于深亚微米DSOI器件的埋氧层的制备
%A TAO Kai
%A DONG Yemin
%A Yi Wanbing
%A Wang Xi
%A Zou Shichang
%A <br>陶凯
%A 董业民
%A 易万兵
%A 王曦
%A 邹世昌
%J 半导体学报
%D 2005
%I 
%X Buried oxide at deep sub-micron intervals is successfully fabricated by patterned SIMOX techniques with low dosage and low energy.The distance between the buried oxide layers can be controlled to 180nm when the length of the silicon dioxide mask is 172nm.Good shape and sharp interface are observed by TEM with no silicon islands and other defects.This technique strongly supports the development of deep sub-micron DSOI devices.
%K DSOI
%K SIMOX
%K BOX<br>DSOI
%K SIMOX
%K 埋氧层
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=EFE6C9B422517E1C&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=B31275AF3241DB2D&sid=F61A98B4CFAD5F2A&eid=C9D6A9952042973F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=12