Synthesis of GaN Nanowires Through Ammoniating ZnO/Ga2O3 Films on Si Substrates
Si基氨化ZnO／Ga2O3薄膜制备GaN纳米线

ZnO middle layers and Ga 2O 3 films were sputte red in turn on Si(111) substrates using radio frequency sputtering system.Then ZnO/Ga 2O 3 films were ammoniated in tube furnace in the flowing NH 3 ambience under normal pressure.ZnO volatilized in NH 3 ambience at high temperature,and at the same time Ga 2O 3 reactived to NH 3 to synthesize GaN nanowires.The measurement results of X-ray diffraction reveal that c axis orientation is preferential in the growth of GaN nanowires with hexagonal wurtzite structure.The morphology,component and structure of the GaN nanowires are studied by SEM,TEM,Fourier transform infrared spectrophotometer,energy dispersive spectroscopy,and the selected area electron diffraction.The volatilization of ZnO layer may be helpful to the reaction of Ga 2O 3 and NH 3 to synthesize GaN nanowires.