%0 Journal Article
%T Synthesis of GaN Nanowires Through Ammoniating ZnO/Ga2O3 Films on Si Substrates<br>Si基氨化ZnO／Ga2O3薄膜制备GaN纳米线
%A Gao Haiyong
%A Zhuang Huizhao
%A Xue Chengshan
%A Wang Shuyun
%A He Jianting
%A DONG Zhihua
%A Wu Yuxin
%A Tian Deheng
%A <br>高海永
%A 庄惠照
%A 薛成山
%A 王书运
%A 何建廷
%A 董志华
%A 吴玉新
%A 田德恒
%J 半导体学报
%D 2005
%I 
%X ZnO middle layers and Ga 2O 3 films were sputte red in turn on Si(111) substrates using radio frequency sputtering system.Then ZnO/Ga 2O 3 films were ammoniated in tube furnace in the flowing NH 3 ambience under normal pressure.ZnO volatilized in NH 3 ambience at high temperature,and at the same time Ga 2O 3 reactived to NH 3 to synthesize GaN nanowires.The measurement results of X-ray diffraction reveal that c axis orientation is preferential in the growth of GaN nanowires with hexagonal wurtzite structure.The morphology,component and structure of the GaN nanowires are studied by SEM,TEM,Fourier transform infrared spectrophotometer,energy dispersive spectroscopy,and the selected area electron diffraction.The volatilization of ZnO layer may be helpful to the reaction of Ga 2O 3 and NH 3 to synthesize GaN nanowires.
%K GaN nanowires
%K ZnO/Ga
%K 2O
%K 3 films
%K RF magnetron sputtering
%K ammoniation<br>GaN纳米线
%K ZnO/Ga2O3薄膜
%K 射频磁控溅射
%K 氨化
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E974C49F3368D89D&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=94C357A881DFC066&sid=90EAFEE49150CFCD&eid=073C3CF5F13F64FE&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=24