Investigation of Defect Energy Levels in Heavily S Implanted Si-GaAs
注S-SI GaAs晶体中的缺陷

The photoluminescence (PL) measurements have been carried out on heavily S implantedsemi-insulating GaAs.Two defect energy levels,with the peaks at 1.239eV and 1.408eV, areobserved.The 1.408eV peak is ascribed to V_(As)Si_(As). The formation of this complex is analys-ed in terms of the transformation of Si_(Ga) to Si_(At), which further combines with V_(As) during annealing.nealing.