%0 Journal Article
%T Investigation of Defect Energy Levels in Heavily S Implanted Si-GaAs<br>注S-SI GaAs晶体中的缺陷
%A Wang Shaobo/
%A <br>王绍渤
%A 吴瑞娣
%A 夏冠群
%J 半导体学报
%D 1989
%I 
%X The photoluminescence (PL) measurements have been carried out on heavily S implantedsemi-insulating GaAs.Two defect energy levels,with the peaks at 1.239eV and 1.408eV, areobserved.The 1.408eV peak is ascribed to V_(As)Si_(As). The formation of this complex is analys-ed in terms of the transformation of Si_(Ga) to Si_(At), which further combines with V_(As) during annealing.nealing.
%K Photoluminescence
%K GaAs
%K Defect<br>光致发光
%K 砷化镓
%K 缺陷
%K 晶体
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=71FE90CD1688F307EF6AEA5C7E84D4AC&yid=1833A6AA51F779C1&vid=F3090AE9B60B7ED1&iid=94C357A881DFC066&sid=117BC32987199759&eid=40862C82D74F7473&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=2