A New Possible Interpretation about DX Center in AlGa As:Si
关于AlGaAs:Si中DX中心的新观点

We have derived the statistics of electron distribution on DX center under different cases.The results are not consistent with the existing Hall experiments of Si doped AlGaAs reportedfrom different laboratories.We propose a possible explanation that there exists two differentkinds of donors SD and DX with comparable concentrations N_(SD) and N_(DX),N_(SD)/N_(DX) is increasedwith increasing N_(Si),SD is the shallow donor and DX is the negative U center bindingtwo electrons.The SD centers provide electrons and the electrons are captured by DXcenters.Therefore,the Fermi energy no longer pins to the DX energy level. Many experiments.are re-explained in this point of view.