%0 Journal Article
%T A New Possible Interpretation about DX Center in AlGa As:Si<br>关于AlGaAs:Si中DX中心的新观点
%A MFLi/Graduate School
%A Academia Sinica
%A BeijingYB Jia/Graduate School
%A Academia Sinica
%A BeijingJZhou/Institute of Semiconductors
%A Academia Sinic
%A BeijingJL Gao/Institute of Semiconductors
%A Academia Sinic
%A BeijingP Y Yu/
%A <br>李名复
%A 贾英波
%A 周洁
%A 高季林
%A 于鑫
%J 半导体学报
%D 1990
%I 
%X We have derived the statistics of electron distribution on DX center under different cases.The results are not consistent with the existing Hall experiments of Si doped AlGaAs reportedfrom different laboratories.We propose a possible explanation that there exists two differentkinds of donors SD and DX with comparable concentrations N_(SD) and N_(DX),N_(SD)/N_(DX) is increasedwith increasing N_(Si),SD is the shallow donor and DX is the negative U center bindingtwo electrons.The SD centers provide electrons and the electrons are captured by DXcenters.Therefore,the Fermi energy no longer pins to the DX energy level. Many experiments.are re-explained in this point of view.
%K DX center
%K Statistics of electron distribution
%K Hall experiment
%K Negative U center<br>AlGaAs：Si
%K DX中心
%K 负U中心
%K 半导体
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=CA240D88C20E5BFA&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=0B39A22176CE99FB&sid=35FC3610259C2B32&eid=117F81797AB182FC&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=1