Low Voltage High Efficient Amorphous-Si Emitter Heterojunction UHF Power Transistors
低电压高效率非晶硅发射极异质结UHF功率晶体管

An UHF silicon heterojunction bipolar power transistor with a heavily doped hydrogenatedamorphous-silicon is reported.The present devices prepared can deliver 4.0 W output powerwith 72% collector efficiency and 8.2 dB gain at 470 MHz for 9.0 V low supply voltage. Thelow voltage amorphous-silicon heterojunction bippolar power transistors available in UHF bandis reported for the first time. In addition, the design and fabrication of low voltage power device using this kind of he-terojunction emitter structure are discussed, and several viable proposals are given.