%0 Journal Article
%T Low Voltage High Efficient Amorphous-Si Emitter Heterojunction UHF Power Transistors<br>低电压高效率非晶硅发射极异质结UHF功率晶体管
%A Wang Yinsheng/Nanjing Electronic Devices Institute
%A NanjingSheng Wenwei/Nanjing Electronic Devices Institute
%A NanjingZhang Xiaoming/Nanjing Electronic Devices Institute
%A NanjingWang Xiaowen/Nanjing Electronic Devices Institute
%A Nanjing
%A <br>王因生
%A 盛文伟
%A 张晓明
%A 王晓雯
%J 半导体学报
%D 1991
%I 
%X An UHF silicon heterojunction bipolar power transistor with a heavily doped hydrogenatedamorphous-silicon is reported.The present devices prepared can deliver 4.0 W output powerwith 72% collector efficiency and 8.2 dB gain at 470 MHz for 9.0 V low supply voltage. Thelow voltage amorphous-silicon heterojunction bippolar power transistors available in UHF bandis reported for the first time. In addition, the design and fabrication of low voltage power device using this kind of he-terojunction emitter structure are discussed, and several viable proposals are given.
%K a-Si: H
%K Heterojunction
%K Microwave Bipolar Power Transistor<br>功率晶体管
%K 非晶硅
%K 异质结
%K UHF
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=FF2CBCD2D93B4B69&yid=116CB34717B0B183&vid=59906B3B2830C2C5&iid=CA4FD0336C81A37A&sid=42425781F0B1C26E&eid=1AE5323881A5ECDC&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=10