Fabrication and Field Emission of Silicon Nano-Crystalline Film
单晶纳米硅薄膜的制备及其场发射特性(英文)
Keywords: nc-Si,anodic etching,uniform orientation,field emission
单晶纳米硅,阳极腐蚀,晶向一致,场发射,nc-Si,anodic,etching,uniform,orientation,field,emission,单晶纳米硅,膜的制备,发射特性,Film,Silicon,Field,Emission,carbon,nanotube,field,emission,efficient,potential,application,current,density,concentration,correlations,film,structure,experiment,parameters,etching,time,mechanical,robustness
Abstract:
用小电流、特殊配比溶液的电化学阳极腐蚀法在p型、〈100〉晶向、0.01Ω·cm电阻率的硅片制备了大面积纳米硅薄膜.通过SEM,TEM,XRD和Raman光谱技术分析薄膜颗粒的微细结构.实验结果表明该纳米硅薄膜由直径为10～20nm,晶向一致的颗粒紧密排列而成,具有很好的物理化学稳定性.系统研究了薄膜结构特征和溶液配比、腐蚀时间、腐蚀电流密度的关系.成功观察到该薄膜具有很好的场发射特性,在0.1μA/cm2电流密度下,其开启电场为3V/μm,接近碳纳米管的1.1V/μm.
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