%0 Journal Article
%T Fabrication and Field Emission of Silicon Nano-Crystalline Film<br>单晶纳米硅薄膜的制备及其场发射特性(英文)
%A Wang Weiming
%A Yu Ke
%A Ding Yanfang
%A Li Qiong
%A Zhu Ziqiang
%A <br>王伟明
%A 郁可
%A 丁艳芳
%A 李琼
%A 朱自强
%J 半导体学报
%D 2004
%I 
%X 用小电流、特殊配比溶液的电化学阳极腐蚀法在p型、〈100〉晶向、0.01Ω·cm电阻率的硅片制备了大面积纳米硅薄膜.通过SEM,TEM,XRD和Raman光谱技术分析薄膜颗粒的微细结构.实验结果表明该纳米硅薄膜由直径为10～20nm,晶向一致的颗粒紧密排列而成,具有很好的物理化学稳定性.系统研究了薄膜结构特征和溶液配比、腐蚀时间、腐蚀电流密度的关系.成功观察到该薄膜具有很好的场发射特性,在0.1μA/cm2电流密度下,其开启电场为3V/μm,接近碳纳米管的1.1V/μm.
%K nc-Si
%K anodic etching
%K uniform orientation
%K field emission<br>单晶纳米硅
%K 阳极腐蚀
%K 晶向一致
%K 场发射
%K nc-Si
%K anodic
%K etching
%K uniform
%K orientation
%K field
%K emission
%K 单晶纳米硅
%K 膜的制备
%K 发射特性
%K Film
%K Silicon
%K Field
%K Emission
%K carbon
%K nanotube
%K field
%K emission
%K efficient
%K potential
%K application
%K current
%K density
%K concentration
%K correlations
%K film
%K structure
%K experiment
%K parameters
%K etching
%K time
%K mechanical
%K robustness
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=FA80FA5BB1F6FC7E&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=B31275AF3241DB2D&sid=46C2A519EDDA03DD&eid=0636354D8CF77519&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13