Photo Response Properties of Photovoltaic New Material--Carbon Nitride Thin Films
光伏新材料a-CN_x薄膜的光电响应性质

Amorphous carbon nitride a-CN .x. thin films are prepared by reactive ion beam sputtering deposition method using N 2 as working gas and a graphite target .The substrates are crystalline silicon and quartz crystal.The properties of dark conductivity and photo response excited by a halogen lamp are studied,which varies with the processing conditions,phosphor doping,and hydrogen-plasma treatment.These experiments show that the photocurrent response gain of undoped thin film is 18,which is 3.0 after phosphorus soaking.After hydrogen-plasma treatment,it increases to 30.The response time of all of the thin films is about 300.